Quantum-mechanical analytical modeling of threshold voltage in long-channel double-gate MOSFET with symmetric and asymmetric gates

2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004

Volumn 2, Issue , 2004, Pages 163-166

  Autran, J L ^a   Munteanu, D ^a   Tintori, O ^a   Harrison, S ^b   Decarre, E ^a   Skotnicki, T ^b  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b STMICROELECTRONICS   (France)

Author keywords

Analytical modeling; Double gate MOSFET; Quantum effects; Threshold voltage modeling

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; FERMI LEVEL; GATES (TRANSISTOR); MATHEMATICAL MODELS; QUANTUM THEORY; SEMICONDUCTOR DOPING; SILICA; THRESHOLD VOLTAGE;

ANALYTICAL MODELING; DOUBLE-GATE MOSFET; QUANTUM EFFECTS; THRESHOLD VOLTAGE MODELING;

MOSFET DEVICES;

EID: 6344291599     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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