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Materials Science and Engineering: B

Volumn 121, Issue 1-2, 2005, Pages 60-63

Highly strained InGaAs oxide confined VCSELs emitting in 1.25 μm

(10) Chang, S J a Yu, H C a Su, Y K a Chen, I L a Lee, T D b Lu, C M b Chiou, C H b Lee, Z H b Yang, H P b Sung, C P b

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

Author keywords

Highly strain; InGaAs; Oxide mode; VCSEL

Indexed keywords

ELECTRIC CURRENTS; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; OXIDATION; RESONANCE; SEMICONDUCTOR LASERS; SOLID STATE LASERS; STRAIN;

HIGHLY STRAIN; LASING WAVELENGTH; OXIDE MODE; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 21044436420 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2005.03.011 Document Type: Article

Times cited : (12)

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