Free-carrier absorption in Be- and C-doped GaAs epilayers and far infrared detector applications

Journal of Applied Physics

Volumn 89, Issue 6, 2001, Pages 3295-3300

  Korotkov, A L ^a   Perera, A G U ^a   Shen, W Z ^a,e   Herfort, J ^b   Ploog, K H ^b   Schaff, W J ^c   Liu, H C ^d  

^a GEORGIA STATE UNIVERSITY   (United States)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^c Cornell University   (United States)

^d NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^e SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035868196     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1347002     Document Type: Article

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