Delta doped AlGaN and AlGaN/GaN HEMTs: Pathway to improved performance?

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2327-2330

  Flynn, Jeffrey S ^a   Xin, Henry ^a   Dion, Joe A ^a   Hutchins, Edward L ^a   Antunes, Helder ^a   Fieschi Corso, Lara ^a   Van Egas, Rae ^a   Brandes, George R ^a  

^a ENTEGRIS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN HEMTS; DELTA-DOPED; DELTA-DOPED LAYERS; DOPANT CONCENTRATIONS; ELECTRICAL CHARACTERISTIC; MOBILITY TECHNIQUES; SPACER LAYER THICKNESS;

ELECTRON GAS; ELECTRON MOBILITY; SEMICONDUCTOR DOPING;

NITRIDES;

EID: 20944441774     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303313     Document Type: Conference Paper

References (7)

1. Some of the first investigations were reported by Jong-Hee Kim et al., Jpn. J. Appl. Phys. 38, 681 (1999)
2. Z. Liliental-Weber et al., Appl. Phys. Lett. 75, 4159 (1999).
3. C. Y. Fang, C. F. Lin, E. Y. Chang, and M. S. Feng, Appl. Phys. Lett. 80, 45580 (2002).
4. M. Wong et al., Electron. Lett. 38, 428, 2002.
5. Preliminary results were presented at the Fall MRS 2002 Meeting.
6. R. Dupuis, Elec. Lett. 38, 428 (2002).
7. M. Shur, Physics of Semiconductor Devices (Prentice Hall, New Jersey, 1990).