Effect of Si delta doping on the luminescence properties of InP/InAIP quantum dots

Applied Physics Letters

Volumn 82, Issue 24, 2003, Pages 4343-4345

  Zhang, X B ^a   Heller, R D ^a   Noh, M S ^a   Dupuis, R D ^a   Walter, G ^b   Holonyak Jr , N ^b  

^a The University of Texas at Austin   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; CATHODOLUMINESCENCE; DOPING (ADDITIVES); INDIUM COMPOUNDS; MOLECULAR ORIENTATION; QUENCHING; SEMICONDUCTING GALLIUM ARSENIDE; SILICON;

REDSHIFTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037773347     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1582364     Document Type: Article

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