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Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

Separated carrier injection control in carbon nanotube field-effect transistors

(7) Pourfath, M a Gehring, A a Ungersboeck, E a Kosina, H a Selberherr, S a Cheong, B H b Park, W J b

a VIENNA UNIVERSITY OF TECHNOLOGY (Austria)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER INJECTION; DRAIN VOLTAGE; GATE VOLTAGE; SCHOTTKY BARRIERS;

CAPACITANCE; CARRIER CONCENTRATION; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; FREQUENCIES; GATES (TRANSISTOR); NANOTECHNOLOGY; SCHOTTKY BARRIER DIODES;

CARBON NANOTUBES;

EID: 20944435934 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1897491 Document Type: Article

Times cited : (22)

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