Flat-band voltage control of a back-gate MOSFET by single ion implantation

Applied Surface Science

Volumn 162, Issue , 2000, Pages 499-503

  Shinada, Takahiro ^a   Ishikawa, Atsuki ^a   Hinoshita, Chie ^a   Koh, Meishoku ^a   Ohdomari, Iwao ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; SEMICONDUCTOR DEVICE STRUCTURES; VOLTAGE CONTROL;

DOPANT NUMBER; SINGE ION IMPLANTATION;

MOSFET DEVICES;

EID: 0034248844     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00239-7     Document Type: Article

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