Reduction of fluctuation in semiconductor conductivity by one-by-one ion implantation of dopant atoms

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 4 A, 2000, Pages

  Shinada, Takahiro ^a   Ishikawa, Atsuki ^a   Hinoshita, Chie ^a   Koh, Meishoku ^a   Ohdomari, Iwao ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL IMPURITIES; ELECTRIC CONDUCTANCE; ELECTRIC CONDUCTIVITY MEASUREMENT; ION IMPLANTATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; STATISTICAL METHODS;

SINGLE ION IMPLANTATION (SII);

RESISTORS;

EID: 0033741756     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l265     Document Type: Article

References (11)