Ultrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN

Applied Physics Letters

Volumn 86, Issue 21, 2005, Pages 1-3

  Mikulics, M ^a   Marso, M ^a   Javorka, P ^a   Kordos P ^a   Luth H ^a   Kocan M ^b   Rizzi, A ^b   Wu, S ^c   Sobolewski, R ^c  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b UNIVERSITY OF GÖTTINGEN   (Germany)

^c University of Rochester   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL TRANSIENTS; LOW-TEMPERATURE-GROWN GAN; METAL-SEMICONDUCTOR-METAL PHOTODETECTORS; PHOTODETECTOR STRUCTURE;

ENERGY GAP; LASER PULSES; MOLECULAR BEAM EPITAXY; PHOTODIODES; SEMICONDUCTOR MATERIALS; THERMAL EFFECTS;

PHOTODETECTORS;

EID: 20844441751     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1938004     Document Type: Article

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