Femtosecond response of a free-standing LT-GaAs photoconductive switch

Applied Optics

Volumn 42, Issue 9, 2003, Pages 1726-1731

  Zheng, Xuemei ^a   Xu, Ying ^a   Sobolewski, Roman ^a,c   Adam, Roman ^b   Mikulics, Martin ^b   Siegel, Michael ^b   Kordoš, Peter ^b  

^a University of Rochester   (United States)

^b The Institue of Thin Films and Interfaces   (United States)

^c INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRIC LINES; ELECTRIC POTENTIAL; PHOTOCONDUCTIVITY; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS;

FEMTOSECOND RESPONSE;

OPTICAL SWITCHES;

EID: 0041381038     PISSN: 1559128X     EISSN: 21553165     Source Type: Journal    
DOI: 10.1364/AO.42.001726     Document Type: Article

References (27)

1. K. Kato, “Ultrawide-band/high-frequency photodetectors,” IEEE Trans. Microwave Theory Tech. 47, 1265-1281 (1999).
2. K. Kato, A. Kozen, Y. Muramoto, Y. Itaya, T. Nagatsuma, and M. Yaita, “110-GHz, 50% efficiency mushroom-mesa wavelength p-i-n photodiode for a 1.55-µm wavelength,” IEEE Photon. Technol. Lett. 6, 719-721 (1994).
3. J.-W. Shi, K.-G. Gan, Y.-J. Chiu, Y.-H. Chen, C.-K. Sun, Y.-J. Yang, and J. E. Bowers, “Metal-semiconductor-metal traveling-wave photodetectors,” IEEE Photon. Technol. Lett. 16, 623-625 (2001).
4. A. G. Foyt, F. J. Lenoberger, and R. C. Williamson, “Picosecond InP optoelectronic switches,” Appl. Phys. Lett. 40, 447-449 (1982).
5. +bombarded InP photoconductors,” Appl. Phys. Lett. 44, 207-209 (1984).
6. M. B. Ketchen, D. Grischkowsky, T. C. Chen, C.-C. Chi, I. N. Duling, III, N. J. Halas, J. M. Halbout, J. A. Kash, and G. P. Li, “Generation of subpicosecond electrical pulses on coplanar transmission lines,” Appl. Phys. Lett. 48, 751-753 (1986).
7. U. D. Keil and D. R. Dykaar, “Electro-optic sampling and carrier dynamics at zero propagation distance,” Appl. Phys. Lett. 61, 1504-1506 (1992).
8. D. H. Auston, “Picosecond photoconductors: physical properties and applications,” in Picosecond Optoelectronic Devices, C. H. Lee, ed. (Academic, Orlando, 1984), pp. 73-117.
9. F. W. Smith, H. Q. Diadiuk, M. A. Hollis, A. R. Calawa, S. Gupta, M. Frankel, D. R. Dykaar, G. A. Mourou, and T. Y. Hsiang, “Picosecond GaAs-based photoconductive optoelectronic detectors,” Appl. Phys. Lett. 54, 890-892 (1989).
10. S. Gupta, M. Y. Frankel, J. A. Valdmanis, J. F. Whitaker, G. A. Mourou, F. W. Smith, and A. R. Calawa, “Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures,” Appl. Phys. Lett. 59, 3276-3278 (1991).
11. S. Gupta, J. Whitaker, and G. Mourou, “Ultrafast carrier dynamics in III-IV semiconductors grown by molecular-beam epitaxy at very low temperatures,” IEEE J. Quantum Electron. 28, 2464 -2472 (1992).
12. M. Y. Liu, S. Y. Chou, T. Y. Hsiang, S. Alexandrou, and R. Sobolewski, “Nanoscale metal-semiconductor-metal photodetectors with subpicosecond response time fabricated using electron beam lithography,” J. Vac. Sci. Technol. B 10, 2932-2935 (1992).
13. C.-C. Wang, S. Alexandrou, D. Jacobs-Perkins, and T. Y. Hsiang, “Comparison of the picosecond characteristics of silicon and silicon-on-sapphire metal-semiconductor-metal photodiodes,” Appl. Phys. Lett. 64, 3578-3580 (1994).
14. xtransmission lines,” Appl. Phys. Lett. 74, 1892-1894 (1999).
15. R. Adam, M. Mikulics, A. Forster, J. Schelten, P. Kordos, M. Siegel, X. Zheng, S. Wu, and R. Sobolewski, “Fabrication and optical response of LT-GaAs freestanding photoconductive devices,” Appl. Phys. Lett. 81, 3485-3487 (2002).
16. P. Kordos, M. Marso, A. Forster, J. Darmo, J. Betko, and G. Nimtz, “Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs,” Appl. Phys. Lett. 71, 1118-1120 (1997).
17. P. Kordos, A. Forster, M. Marso, and F. Ruders, “550 GHz bandwidth photodetector on low-temperature-grown molecular beam epitaxial GaAs,” Electron. Lett. 34, 119-120 (1998).
18. Y. Sasaki, T. Koishi, K. Shibahara, S. Yokoyama, and M. Hi-rose, “High-speed GaAs epitaxial lift-off and bonding with high alignment accuracy using a sapphire plate,” J. Electrochem. Soc. 146, 710-712 (1999).
19. M. Mikulics, M. Marso, R. Adam, A. Fox, D. Buca, A. Forster, P. Kordos, Y. Xu, and R. Sobolewski, “Low-temperature-grown MBE GaAs for terahertz photomixers,” in Proceedings of IEEE International Symposium on Electronic Devices for Microwave and Optoelectronic Applications (Institute of Electrical and Electronics Engineers, New York, 2001), pp. 155-159.
20. J. A. Valdmanis and G. A. Mourou, “Subpicosecond electrooptic sampling: principles and applications,” IEEE J. Quantum Electron. QE-22, 69-78 (1986).
21. S. S. Alexandrou, R. Sobolewski, and T. Y. Hsiang, “Time domain characterization of bent coplanar waveguides,” IEEE J. Quantum Electron. 28, 2325-2332 (1992).
22. M. Y. Frankel, J. F. Whitaker, G. A. Mourou, and J. A. Vald-manis, “Experimental characterization of electro-optic probes,” IEEE Microwave Guid. Wave Lett. 1, 60-62 (1991).
23. J. M. Chwalek and D. R. Dykaar, “A mixer based electro-optic sampling system for submillivolt signal detection,” Rev. Sci Instr. 61, 1273-1276 (1990).
24. R. Adam, R. Sobolewski, and M. Darula, “Subpiosecond dynamics of the switching process in Y-Ba-Cu-O Josephson junctions,” in Superconducting and Related Oxides: Physics and Nanoengineering IV, I. Bozovic and D. Pavuna, eds., Proc. SPIE 4058, 230-244 (2000).
25. L. Y. Lin, M. C. Wu, T. Itoh, T. A. Vang, R. E. Muller, D. L. Sivco, and A. Y. Cho, “High-power high-speed photodetectors design, analysis, and experimental demonstration,” IEEE Trans. Microwave Theory Tech. 45, 1320-1331 (1997).
26. D. Kuh, F. Hieronymi, E. H. Bottcherr, T. Wolf, D. Bimberg, J. Kuhl, and M. Klingenstein, “Influence of space charges on the impulseresponse of InGaAs metal-semiconductor-metal Photodetectors,” J. Lightwave Technol. 10, 753-759 (1992).
27. G. Segschneider, R. Jacob, T. Loffler, and J. G. Roskos, “Freecarrier dynamics in low-temperature-grown GaAs at high excitation densities investigated by time-domain terahertz spectroscopy,” Phys. Rev. B. 65, 125205 (2002).