Electrical and radiation assisted passivation of Ta 2O 5/Si interface

Journal of Applied Physics

Volumn 95, Issue 12, 2004, Pages 8463-8465

  Hutson, J M ^a   Devine, R A B ^a   Schrimpf, R D ^b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MULTILAYER FILTERS; NEGATIVE BIAS STRESSING; RADIATION ASSISTED PASSIVATION; STRESS BIASING;

AMORPHOUS FILMS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELLIPSOMETRY; FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); MASKS; MICROELECTRONICS; PASSIVATION; PERMITTIVITY; POINT DEFECTS; SILICA; STRESS ANALYSIS; TANTALUM COMPOUNDS; THIN FILMS;

MOS CAPACITORS;

EID: 3142575496     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1745116     Document Type: Review

References (6)

1. Optical Coating Laboratory Inc., 2789 Northpoint Parkway, Santa Rosa, CA 95407-7397.
2. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), Chap. 7.
3. See, for example, Fig. 3.30 in Ionizing Radiation effects in MOS Devices and Circuits, edited by T. P. Ma and P. V. Dressendorfer (Wiley, New York, 1989), Chap. 3, p. 155.
4. L. M. Terman, Solid-State Electron. 5, 285 (1962).
5. 5 films was significant and it impaired measurements by other methods such as the quasistatic technique (see Ref. 2).
6. J. Robertson, MRS Bull. 27, 21 (2002).