Soft breakdown in very thin Ta2O5 gate dielectric layers

Solid-State Electronics

Volumn 44, Issue 3, 2000, Pages 521-525

  Houssa, M ^a   Mertens, P W ^a   Heyns, M M ^a   Jeon, J S ^b   Halliyal, A ^b   Ogle, B ^b  

^a IMEC   (Belgium)

^b ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN OF SOLIDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; TANTALUM COMPOUNDS;

DIELECTRIC BREAKDOWN; SOFT BREAKDOWN; THIN GATE DIELECTRIC LAYERS;

MOS CAPACITORS;

EID: 0034159553     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00263-4     Document Type: Article

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