Injection of holes from the silicon substrate in Ta2O 5 films grown on silicon

Applied Physics Letters

Volumn 85, Issue 15, 2004, Pages 3142-3144

  Novkovski, N ^a   Atanassova, E ^b  

^a SS CYRIL AND METHODIUS UNIVERSITY   (Macedonia)

^b INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; ELLIPSOMETRY; EVAPORATION; FILM GROWTH; LEAKAGE CURRENTS; MIM DEVICES; SILICA; TANTALUM COMPOUNDS; THERMOANALYSIS; ULTRATHIN FILMS;

BIAS POLARITIES; CONDUCTION MECHANISMS; POLARITIES; POOLE-FRENKEL EMISSION;

SILICON;

EID: 8644278117     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1804235     Document Type: Article

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