Power transistors fabricated using isotopically purified silicon (28Si)

IEEE Electron Device Letters

Volumn 26, Issue 6, 2005, Pages 404-406

  Kizilyalli, I C ^a   Safar, H ^a   Herbsommer, J ^a   Burden, S J ^b   Gammel, P L ^a  

^a AGERE SYSTEMS   (United States)

^b Isonics Corporation   (United States)

Author keywords

Heat extraction; Isotopically pure silicon (28Si); Power dissipation; Reliability; RF LDMOS transistor; Thermal design

Indexed keywords

HEAT RESISTANCE; INTEGRATED CIRCUIT MANUFACTURE; MICROSCOPIC EXAMINATION; PHONONS; PURIFICATION; RELIABILITY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; THERMAL CONDUCTIVITY;

HEAT EXTRACTION; INFRARED MICROSCOPY; ISOTOPICALLY PURE SILICON; POWER DISSIPATION; POWER TRANSISTOR; RF LDMOS TRANSISTOR; THERMAL DESIGN;

MOSFET DEVICES;

EID: 20544472648     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.848111     Document Type: Article

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