Analysis and design of a low-voltage high-frequency LDMOS transistor

IEEE Transactions on Electron Devices

Volumn 49, Issue 6, 2002, Pages 976-980

  Vestling, Lars ^a,b   Ankarcrona, Johan ^b   Olsson, Jörgen ^a,b  

^a IEEE   (Sweden)

^b UPPSALA UNIVERSITY   (Sweden)

Author keywords

Equivalent circuits; Lateral double diffused MOS (LDMOS) transistor; Microwave FETs

Indexed keywords

TRANSISTOR DESIGN;

CAPACITANCE; CIRCUIT THEORY; ELECTRIC CONDUCTANCE; EQUIVALENT CIRCUITS; INTEGRATED CIRCUIT LAYOUT; PARAMETER ESTIMATION; SEMICONDUCTOR JUNCTIONS;

MOSFET DEVICES;

EID: 0036610618     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.1003715     Document Type: Article

References (9)

1. The push toward low voltage devices
2. High efficiency 2 GHz power Si-MOSFET design under low supply voltage down to 1 V
3. 2-GHz Si power MOSFET technology
4. A CMOS compatible power MOSFET for low voltage GHz operation
5. Integration of a novel high-voltage GigaHertz DMOS transistor into a standard CMOS process
6. Channel length extraction for DMOS transistors using capacitance-voltage measurements
7. An on-wafer de-embedding technique for silicon transistors at microwave frequencies
8. Accurate SOI MOSFET characterization at microwave frequencies for device performance optimization and analog modeling