Effect of point defect injection on diffusion of boron in silicon and silicon-germanium in the presence of carbon

Journal of Applied Physics

Volumn 97, Issue 11, 2005, Pages

  Karunaratne, M S A ^a   Willoughby, A F W ^a   Bonar, J M ^b   Zhang, J ^c   Ashburn, P ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b Innos Ltd   (United Kingdom)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION SUPPRESSION; INTERSTITIAL INJECTION; POINT DEFECT INJECTION; TRANSIENT ELECTRON DIFFUSION (TED);

ANNEALING; CARBON; COMPUTER SIMULATION; DIFFUSION; GERMANIUM; HETEROJUNCTION BIPOLAR TRANSISTORS; MOLECULAR BEAM EPITAXY; POINT DEFECTS; SECONDARY ION MASS SPECTROMETRY; SILICON;

BORON;

EID: 20544465601     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1927706     Document Type: Article

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