Investigation of sidewall recombination in GaN using a quantum well probe

Materials Research Society Symposium - Proceedings

Volumn 639, Issue , 2001, Pages

  Haberer, E D ^a   Woods, M ^a   Stonas, A ^a   Chen, C H ^a   Keller, S ^a   Hansen, M ^a   Mishra, U ^a   DenBaars, S ^a   Bowers, J ^a   Hu, E L ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHLORINE; ETCHING; IONS; LASERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

GALLIUM NITRIDE QUANTUM WELL; HELIUM-CADMIUM LASER; INDIUM GALLIUM NITRIDE QUANTUM WELL; QUANTUM WELL PROBE STRUCTURE; SIDEWALL RECOMBINATION;

GALLIUM NITRIDE;

EID: 0035559873     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)