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Volumn 25, Issue 12 SPEC. ISS., 2005, Pages 2341-2345

Improvement of the ferroelectric properties of ABO3 (A = Pb, Ca, Ba; B = Ti, Zr) films

Author keywords

BaTiO3 and titanates; Chemical solution deposition method; Ferroelectric properties; Films; Perovskites

Indexed keywords

ATOMIC FORCE MICROSCOPY; CALCIUM COMPOUNDS; CRYSTAL GROWTH; CRYSTALLIZATION; DEPOSITION; ELECTRIC VARIABLES MEASUREMENT; FERROELECTRICITY; GRAIN SIZE AND SHAPE; LANTHANUM COMPOUNDS; LEAD COMPOUNDS; MICROWAVE OVENS; MORPHOLOGY; X RAY DIFFRACTION ANALYSIS;

EID: 20444469658     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jeurceramsoc.2005.03.054     Document Type: Article
Times cited : (4)

References (25)
  • 1
    • 0032109136 scopus 로고    scopus 로고
    • The physics of ferroelectric memories
    • O. Auciello J.F. Scott and R. Ramesh The physics of ferroelectric memories. Phys. Today 51 1998 22-27
    • (1998) Phys. Today , vol.51 , pp. 22-27
    • Auciello, O.1    Scott, J.F.2    Ramesh, R.3
  • 2
    • 35348846979 scopus 로고
    • Ferroelectric memories
    • J.F. Scott and C.A. Paz de Araujo Ferroelectric memories. Science 246 1989 1400-1405
    • (1989) Science , vol.246 , pp. 1400-1405
    • Scott, J.F.1    Paz de Araujo, C.A.2
  • 16
    • 0037076982 scopus 로고    scopus 로고
    • 12 films of uniform a-axis orientation on silicon substrates
    • 12 films of uniform a-axis orientation on silicon substrates. Science 296 2002 2006-2009
    • (2002) Science , vol.296 , pp. 2006-2009
    • Lee, H.N.1    Hesse, D.2    Zakharov, N.3    Gösele, U.4
  • 17
    • 0037076989 scopus 로고    scopus 로고
    • Materials science - Orienting ferroelectric films
    • R. Ramesh and D.G. Schlom Materials science - Orienting ferroelectric films Science 296 2002 1975-1976
    • (2002) Science , vol.296 , pp. 1975-1976
    • Ramesh, R.1    Schlom, D.G.2
  • 21
    • 0037470411 scopus 로고    scopus 로고
    • 3 coated Si and fused quartz substrates prepared by sol-gel process
    • 3 coated Si and fused quartz substrates prepared by sol-gel process Appl. Surf. Sci. 207 2003 63-68
    • (2003) Appl. Surf. Sci. , vol.207 , pp. 63-68
    • Tang, X.G.1    Chan, H.L.2    Ding, A.L.3
  • 22
  • 23
    • 1342327959 scopus 로고    scopus 로고
    • Preparation and characterization of multi-coating PZT thick films by sol-gel process
    • S.H. Hu X.J. Meng G.S. Wang J.L. Sun and D.X. Li Preparation and characterization of multi-coating PZT thick films by sol-gel process. J. Cryst. Growth 264 2004 307-311
    • (2004) J. Cryst. Growth , vol.264 , pp. 307-311
    • Hu, S.H.1    Meng, X.J.2    Wang, G.S.3    Sun, J.L.4    Li, D.X.5
  • 25
    • 36449005082 scopus 로고
    • Identification of passive layer in ferroelectric thin-films from their switching parameters
    • A.K. Tagantsev M. Landivar E. Colla and N. Setter Identification of passive layer in ferroelectric thin-films from their switching parameters J. Appl. Phys. 78 1995 2623-2630
    • (1995) J. Appl. Phys. , vol.78 , pp. 2623-2630
    • Tagantsev, A.K.1    Landivar, M.2    Colla, E.3    Setter, N.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.