Microstructural and transport properties of LaNiO3-δ films grown on Si (111) by chemical solution deposition

Thin Solid Films

Volumn 445, Issue 1, 2003, Pages 54-58

  Escote, M T ^a   Pontes, F M ^a   Leite, E R ^a   Varela, J A ^c   Jardim, R F ^b   Longo, E ^a  

^a FEDERAL UNIVERSITY OF SÃO CARLOS   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

^c SÃO PAULO STATE UNIVERSITY UNESP   (Brazil)

Author keywords

Atomic force microscopy (AFM); Chemical solution deposition; Electrical properties; Thin films

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY; FILM GROWTH; MICROSTRUCTURE; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SILICON; THIN FILMS; X RAY DIFFRACTION;

CHEMICAL SOLUTION DEPOSITION;

LANTHANUM COMPOUNDS;

EID: 0242335217     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.08.050     Document Type: Article

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