Effect of diffraction and film-thickness gradients on wafer-curvature measurements of thin-film stress

Journal of Applied Physics

Volumn 95, Issue 7, 2004, Pages 3453-3465

  Breiland, W G ^a   Lee, S R ^a   Koleske, D D ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FILM-THICKNESS GRADIENTS; MULTIBEAM OPTICAL STRESS SENSOR (MOSS);

CAMERAS; CHARGE COUPLED DEVICES; DIFFRACTION; GALLIUM COMPOUNDS; LASER BEAMS; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; OPTICAL CORRELATION; OPTICAL SENSORS; REFLECTION; STRESSES; VAPOR PHASE EPITAXY;

THIN FILMS;

EID: 1942425014     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1650882     Document Type: Article

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