Crack nucleation in AlGaN/GaN heterostructures

Materials Research Society Symposium - Proceedings

Volumn 743, Issue , 2002, Pages 505-510

  Parbrook, Peter J ^a   Whitehead, Malcom A ^a   Lynch, Richard J ^a   Murray, Robert T ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRACK PROPAGATION; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; OPTICAL MICROSCOPY; PRESSURE EFFECTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; TENSILE PROPERTIES;

ALUMINUM GALLIUM NITRIDE; CRACK NUCLEATION; TENSILE STRAIN;

HETEROJUNCTIONS;

EID: 0038710472     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-743-l7.10     Document Type: Conference Paper

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