Effect of SiO2 thickness on dielectric breakdown defect density due to surface crystal-originated particles

Journal of the Electrochemical Society

Volumn 150, Issue 3, 2003, Pages

  Yamabe, Kikuo ^a,b   Shimada, Yasuhiro ^b,c   Piao, Min ^b,d   Yamazaki, Tohru ^b,e   Otsuki, Tsuyoshi ^b,f   Takeda, Ryuji ^b,g   Ohta, Yasumitsu ^b,h   Jimbo, Susumu ^b,i   Watanabe, Masaharu ^b,j  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b GOI Task Force   (Japan)

^c Komatsu Electric Material Company   (Japan)

^d MEMC Japan Company   (Japan)

^e SUMCO CORPORATION   (Japan)

^f SHIN ETSU CHEMICAL CO LTD   (Japan)

^g Nissei Bldg   (Japan)

^h Wacker NSCE Corporation   (Japan)

ⁱ AE Group   (Japan)

^j Japan ADE Limited   (Japan)

more..

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL POLISHING; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; DENSITY (SPECIFIC GRAVITY); ELECTRIC BREAKDOWN; FILM GROWTH; OXIDATION; POLYCRYSTALLINE MATERIALS; THICKNESS MEASUREMENT;

DIELECTRIC BREAKDOWN DEFECT DENSITY; SURFACE CRYSTAL ORIGINATED PARTICLES; TIME ZERO DIELECTRIC BREAKDOWN;

SILICA;

EID: 0037348938     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1541008     Document Type: Article

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