Copper interconnect electromigration behaviors in various structures and lifetime improvement by cap/dielectric interface treatment

Microelectronics Reliability

Volumn 45, Issue 7-8, 2005, Pages 1061-1078

  Lin, M H ^a   Lin, Y L ^a   Chang, K P ^a   Su, K C ^a   Wang, Tahui ^a  

^a UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ADHESION; COPPER; CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; FAILURE ANALYSIS; INTEGRATED CIRCUITS; MATHEMATICAL MODELS; PROBABILITY; STATISTICAL METHODS; THIN FILMS; VLSI CIRCUITS;

CAP-LAYER DEPOSITION; METAL RESISTANCES; METALLIC WIRES; WEAK-LINK MODELS;

ELECTROMIGRATION;

EID: 20344385249     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.11.055     Document Type: Article

References (14)

1. Hu C-K, Harper JME, Copper Interconnect: fabrication and reliability. VLSI Technology, Systems, and Applications, Proceedings of Technical Papers, 1997. p. 18-22.
2. Hu C-K, Rosenberg R, Rathore HS, Nguyen DB, Agarwala B, Scaling effect on electromigration in on-chip Cu wiring, In: IEEE 1999 International Interconnect Technology Conference, 1999. p. 267-9.
3. Lloyd J et al. Adhesion and electromigration in Cu interconnect. In: Proc 2002 International Integrated Reliability Workshop, October 21-24, 2002.
4. Hatano M et al. EM lifetime improvement of Cu damascene interconnect by P-SiC cap layer. In: IEEE 2002 International Interconnect Technology Conference, 2002. p. 212.
5. C.-K. Hu Reduced electromigration of Cu wires by surface coating Appl Phys Lett 81 2002 1782 1784
6. Fisher AH et al. Electromigration failure mechanism studies on copper interconnects. In: IEEE 2002 International Interconnect Technology Conference, 2002. p. 139-41.
7. von Glasow A et al. The influence of the SiN cap process on the electromigration and stressvoiding performance of dual damascene Cu interconnects. In: Proc 41th Annual Reliability Physics Symposium, IEEE, 2003. p. 146-50.
8. Lin MH et al. A practical methodology for multi-modality Cu electromigration lifetime prediction. In: Proc 2002 International Integrated Reliability Workshop, October 21-24, 2002.
9. Sato H et al. Mechanism of dependency of EM properties on linewidth in dual damascene copper interconnects. In: 2001 International Interconnect Technology Conference, 2001. p. 186-8.
10. H.A. Schafft The measurement use and interpretation of the temperature coefficient of resistance of metallizations Solid-State Electron 35 3 1992 403 410
11. von Glasow A et al. Using the temperature coefficient of the resistance (TCR) as early reliability indicator for stressvoiding risks in Cu interconnects. In: Proc 41th Annual Reliability Physics Symposium, IEEE, 2003. p. 126-31.
12. Lin MH et al. The improvement of copper interconnect electromigration resistance by cap/dielectic interface treatment and geometrical design. In: Proc 42th Annual Reliability Physics Symposium, IEEE, 2004. p. 229-33.
13. Li B-Z et al. Line depletion electromigration characteristic of Cu interconnects. In: Proc 41th Annual Reliability Physics Symposium, IEEE, 2003. p. 140-5.
14. 3-plasma treatment and CMP modification on TDDB improvement Cu metallization IEEE Trans Elec Devices 48 2001 1340 1345