Line depletion electromigration characteristics of Cu interconnects

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2003, Pages 140-145

  Li, Baozhen ^a   Sullivan, Timothy D ^a   Lee, Tom C ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

Cu interconnect; Electromigration; Line depletion; Liner; Redundancy; Reliability; Ta; Via; Void

Indexed keywords

COPPER; DIFFUSION; ELECTROMIGRATION; REDUNDANCY; SEMICONDUCTOR DEVICE MANUFACTURE;

LINE DEPLETION;

ELECTRIC CONNECTORS;

EID: 0038310179     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. J. Lloyd, et al, "Adhesion and Electromigration In Cu Interconnect", 2002 International Integrated Reliability Workshop, Lake Tahoe, CA, Oct 21-24, 2002 (IEEE Proceedings in print)
2. C. Goldberg, et al, "Interface Reliability of High Performance Interconnects", Presented at Advanced Metallization Conferences, San Diego, CA, Oct. 2002
3. A. H. Fischer, et al, "Electromigration Failure Mechanism Studies on Copper Interconnects", Proc. Of the IEEE 2002 Intern. Interconnect Tech. Conf., 2002, pp139-141
4. th Annual Reliability Physics Symposium, IEEE, 2002, pp298-304
5. C. -K Hu, et al, "Bimodal EM Mechanisms in Dual-Damascene Cu Line/Via on W", Proc. Of the IEEE 2002 Intern. Interconnect Tech. Conf., 2002, pp133-135
6. "Foundry Process Qualification Guidelines", JEDEC/FSA Joint Publication, JP-001, Sept., 2002
7. D. Edelstein, et al, "A High Performance Liner for Copper Damascene Interconnects", Proc. Of the IEEE 2001 Intern. Interconnect Tech. Conf., 2001, pp9-11