Using the temperature coefficient of the resistance (TCR) as early reliability indicator for stressvoiding risks in Cu interconnects

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2003, Pages 126-131

  Von Glasow, A ^a   Fischer, A H ^a   Steinlesberger, G ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COPPER; CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTALLIZATION; GRAIN SIZE AND SHAPE; MICROSTRUCTURE; THIN FILMS;

TEMPERATURE COEFFICIENT OF RESISTANCE (TCR);

OPTICAL INTERCONNECTS;

EID: 0038310191     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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