The improvement of copper interconnect electromigration resistance by cap/dielectic interface treatment and geometrical design

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 229-233

  Lin, M H ^a   Lin, Y L ^a   Chen, J M ^a   Tsai, C C ^a   Yeh, M S ^a   Liu, C C ^a   Hsu, Steven ^a   Wang, C H ^a   Sheng, Y C ^a   Chang, K P ^a   Su, K C ^a   Chang, Y J ^a   Wang, Tahui ^b  

^a UNITED MICROELECTRONICS CORPORATION   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; COPPER COMPOUNDS; DATA ACQUISITION; DIELECTRIC MATERIALS; FAILURE ANALYSIS; INTERCONNECTION NETWORKS; INTERFACES (MATERIALS); SCANNING ELECTRON MICROSCOPY; SURFACE TREATMENT; THERMAL CONDUCTIVITY;

CAP-LAYER DEPOSITION; ELECTRON FLOW; INTERCONNECT SYSTEMS; INTERFACE DIFFUSION;

ELECTROMIGRATION;

EID: 3042654609     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. J. Lloyd et al., "Adhesion and Electromigration In Cu Interconnect", Proc. 2002 International Integrated Reliability Workshop, Oct 21-24, 2002.
2. M. Hatano et al., "EM Lifetime improvement of Cu damascene interconnect by P-SiC cap layer", IEEE IITC p.212, 2002.
3. C.-K. Hu et al., "Reduced electromigration of Cu wires by surface coating", Appl. Phys. Lett. 81, pp. 1782-1784, 2002.
4. A.H. Fisher et al "Electromigration failure Mechanism Studies on Copper interconnects", IEEE IITC pp.139-141, 2002.
5. A.von Glasow et al., "The Influence of the SiN cap process on the Electromigration and stressvoiding performance of dual damascene Cu Interconnects", Proc. 41th Annual Reliability Physics Symposium, IEEE, 2003, pp146-150.
6. M.-H. Lin et al, "A Practical Methodology for Multi-modality Cu Electromigration Lifetime Prediction" Proc. 2002 International Integrated Reliability Workshop, Oct 21-24, 2002
7. J. Noguchi et al., "Effect of NH3-Plasma Treatment and CMP Modification on TDDB Improvement Cu Metallization", IEEE Trans. On Elec. Devices 48, pp1340-1345, 2001.
8. B.-Z. Li et al., "Line Depletion Electromigration Characteristic of Cu Interconnects", Proc. 41th Annual Reliability Physics Symposium, IEEE, 2003, pp140-145.