Conduction mechanisms and an evidence for phonon-assisted conduction process in thin high-k HfxTiySizO films

Microelectronics Reliability

Volumn 45, Issue 7-8, 2005, Pages 1124-1133

  Paskaleva, A ^a,c   Bauer, A J ^a   Lemberger, M ^b  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COMPOSITION; ELECTRIC CHARGE; ELECTRIC CONDUCTIVITY; ELECTRON TUNNELING; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; PHONONS; SILICA; TANTALUM COMPOUNDS; TITANIUM DIOXIDE;

CONDUCTION MECHANISMS; MOORE'S LAW; POOLE-FRENKEL EMISSION; STRUCTURAL CHANGES;

THIN FILMS;

EID: 20344379907     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.12.018     Document Type: Article

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