Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors

Microelectronics Reliability

Volumn 43, Issue 8, 2003, Pages 1253-1257

  Paskaleva, Albena ^a   Lemberger, Martin ^a   Zürcher, Stefan ^b   Bauer, Anton J ^c   Frey, Lothar ^a,c   Ryssel, Heiner ^a,c  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b ETH ZURICH   (Switzerland)

^c FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CHARGE; ELECTRON TRAPS; GATES (TRANSISTOR); INDUCTANCE; LEAKAGE CURRENTS; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; SILICA; SYNTHESIS (CHEMICAL); THERMODYNAMIC STABILITY; ZIRCONIUM COMPOUNDS;

CHEMICAL STABILITY;

DIELECTRIC FILMS;

EID: 0041663625     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00180-X     Document Type: Conference Paper

References (9)

1. Wilk G.D., Wallace R.M., Anthony J.M. High-. k dielectrics: Current status and materials properties considerations J Appl Phys. 89(10):2001;5243-5275.
2. Gordon R.G., Becker J., Hausmann D., Suh S. Vapor deposition of metal oxides and silicates: Possible gate insulators for future microelectronics. Chem Mater. 13:2001;2463-2464.
3. 2 films deposited on Si by chemical-vapor deposition using amide precursors. Appl Phys Lett. 80(13):2002;2362-2364.
4. 2 in semiconducting devices Chem Vap Dep. 8(4):2002;171-177.
5. Misra V., Lucovsky G., Parsons G. Issues in high-. k gate stack interfaces MRS Bull. 27(3):2002;212-216.
6. Svensson C., Lundström I. Trap-assisted charge injection in MNOS structures. J Appl Phys. 44(10):1973;4657-4663.
7. Houssa M., Tuominen M., Naili M., Afanas'ev V., Stesmans A., Haukka S., Heyns M.M. Trap-assisted tunneling in high permittivity gate dielectric stacks. J Appl Phys. 87(12):2000;8615-8620.
8. Robertson J. Electronic structure and band offsets of high-dielectric-constant gate oxides. MRS Bull. 27(3):2002;217-221.
9. Lemberger M, Paskaleva A, Zürcher S, Bauer AJ, Frey L. Ryssel H. Zirconium silicate films obtained from novel MOCVD precursors. J Non-Cryst Sol, in press.