Low-temperature diffusion thermopower in GaN/AlGaN heterojunctions: Effect of dislocations

Physical Review B - Condensed Matter and Materials Physics

Volumn 71, Issue 12, 2005, Pages

  Kamatagi, M D ^a   Sankeshwar, N S ^b   Mulimani, B G ^b  

^a KLE TECHNOLOGICAL UNIVERSITY   (India)

^b KARNATAK UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM DERIVATIVE; GALLIUM; NITROGEN DERIVATIVE;

ARTICLE; CALCULATION; DIFFUSION; ELECTRON; GAS; LOW TEMPERATURE; PHONON; PIEZOELECTRICITY;

EID: 20044374263     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.71.125334     Document Type: Article

References (36)

1. O. Ambacher, J. Phys. D 31, 2653 (1998).
2. H. Morkoc, Nitride Semiconductors and Devices (Springer-Verlag, Berlin, 1999).
3. T. Miyajima, T. Tsuyoshi, T. Asano, K. Yanashima, S. Kijima, T. Hino, M. Takeya, S. Uchida, S. Tomiya, K. Funato, T. Asatsuma, T. Kobayashi, and M. Ikeda, J. Phys.: Condens. Matter 13, 7099 (2001).
4. L. Hsu and W. Walukiewicz, Phys. Rev. B 56, 1520 (1997).
5. B. K. Ridley, B. E. Foutz, and L. F. Eastman, Phys. Rev. B 61, 16 862 (2000).
6. R. P. Joshi, S. Viswanadha, B. Jogai, P. Shah, and R. D. del Rosario, J. Appl. Phys. 93, 10 046 (2003).
7. D. C. Look and J. R. Sizelove, Phys. Rev. Lett. 82, 1237 (1999).
8. C. Mavroidis, J. J. Harris, M. J. Kappers, and C. J. Humphreys, J. Appl. Phys. 93, 9095 (2003).
9. S. Gokden, Physica E (Amsterdam) 23, 19 (2004).
10. D. Zanato, S. Gokden, N. Balkan, B. K. Ridley, and W. J. Schaff, Semicond. Sci. Technol. 19, 427 (2004).
11. N. G. Weimann, L. F. Eastman, D. Doppalapudi, H. M. Ng, and T. D. Moustakas, J. Appl. Phys. 83, 3656 (1998).
12. D. Jena and U. K. Mishra, Appl. Phys. Lett. 76, 1707 (2000).
13. H. M. Ng, D. Doppalapudi, T. D. Moustakas, N. G. Weimann, and L. F. Eastman, Appl. Phys. Lett. 73, 821 (1998).
14. D. Jena, A. C. Gossard, and U. K. Mishra, Appl. Phys. Lett. 80, 64 (2002).
15. F. A. Ponce, MRS Bull. 22, 51 (1997).
16. F. J. Blatt, P. A. Schroeder, C. L. Foiles, and D. Greig, Thermoelectric Power of Metals (Plenum Press, New York, 1976).
17. B. L. Gallagher and P. N. Butcher, in Handbook on Semiconductors, edited by P. T. Landsberg (Elsevier, Amsterdam, 1992) Vol. 1 p. 817.
18. R. Fletcher, Semicond. Sci. Technol. 14, R1 (1999).
19. T. Ando, A. B. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982).
20. N. W. Ashcroft and N. D. Mermin, Solid State Physics (Saunders College Publishing, New York, 1976).
21. V. C. Karavolas and P. N. Butcher, J. Phys.: Condens. Matter 3, 2597 (1991).
22. W. Walukiewicz, H. E. Ruda, J. Lagowski and H. C. Gatos, Phys. Rev. B 30, 4571 (1984).
23. C. Shi, P. M. Asbeck, and Edward T. Yu, Appl. Phys. Lett. 74, 573 (1999).
24. J.-L. Farvacque, Phys. Rev. B 62, 2536 (2000).
25. P. J. van Hall, T. Klavar, and J. H. Wolter, Semicond. Sci. Technol. 3, 120 (1988).
26. B. K. Ridley, Semicond. Sci. Technol. 11, 1339 (1996).
27. B. K. Ferry and S. M. Goodnick, Transport in Nanostructures (Cambridge University Press, Cambridge, 1997).
28. T. Kawamura and S. Das Sarma, Phys. Rev. B 45, 3612 (1992).
29. P. Tripathy and B. K. Ridley, Phys. Rev. B 66, 195301 (2002).
30. N. A. Zakhleniuk, C. R. Bennett, M. Babiker, and B. K. Ridley, Appl. Phys. Lett. 75, 1565 (1999).
31. C. J. Emeleus, T. E. Whall, D. W. Smith, R. A. Kublak, E. H. C. Parkar, and M. J. Kearney, J. Appl. Phys. 73, 3852 (1993).
32. S. Syed, M. J. Manfra, Y. J. Wang, R. J. Molnar, and H. L. Stormer, Appl. Phys. Lett. 84, 1507 (2004).
33. M. D. Kamatagi, N. S. Sankeshwar, and B. G. Mulimani, Proc. Solid State Phys. Symp., Vol. 46C, (2003).
34. H. L. Stormer, L. N. Pfeiffer, K. W. Baldwin, and K. W. West, Phys. Rev. B 41, 1278 (1990).
35. N. S. Sankeshwar, M. D. Kamatagi, and B. G. Mulimani (unpublished).
36. A. Knabchen, cond-mat/9702150 (unpublished).