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Volumn 23, Issue 1-2, 2004, Pages 19-25

Dislocation scattering effect on two-dimensional electron gas transport in GaN/AlGaN modulation-doped heterostructures

Author keywords

Dislocation scattering; GaN AlGaN; MDH; Transport and quantum lifeftime

Indexed keywords

CARRIER CONCENTRATION; DISLOCATIONS (CRYSTALS); ELECTRON GAS; ELECTRON MOBILITY; HETEROJUNCTIONS; IONIZATION; QUANTUM THEORY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; STATISTICAL METHODS;

EID: 2642525410     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.272     Document Type: Article
Times cited : (9)

References (40)
  • 6
    • 25044468084 scopus 로고
    • also published as
    • Van de Walle (Ed.), Wide band gap semiconductors, in: Proceedings of the Seventh Trieste Semiconductor Symposium, 1992, North-Holland, Amsterdam, 1993; also published as Physica B 185 (1993).
    • (1993) Physica B , vol.185
  • 29
    • 33845262265 scopus 로고
    • R.K. Willardson, A.C. Beer (Eds.), Academic Press, New York (Chapter 1)
    • D.L. Rode, in: R.K. Willardson, A.C. Beer (Eds.), Semiconductors and Semimetals Vol. 10, 1975, Academic Press, New York (Chapter 1).
    • (1975) Semiconductors and Semimetals , vol.10
    • Rode, D.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.