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Applied Physics Letters

Volumn 84, Issue 9, 2004, Pages 1507-1509

Electron scattering in AlGaN/GaN structures

(5) Syed, S a Manfra, M J b Wang, Y J c Molnar, R J d Stormer, H L b,e

a Fu Foundation School of Engineering and Applied Science (United States)

b LUCENT TECHNOLOGIES (United States)

c FLORIDA STATE UNIVERSITY (United States)

d MIT LINCOLN LABORATORY (United States)

e Howard Hughes Medical Institute (United States)

Author keywords

[No Author keywords available]

Indexed keywords

QUANTUM LIFETIMES; TWO-DIMENSIONAL ELECTRON SYSTEMS (2DES);

BACKSCATTERING; CARRIER CONCENTRATION; COMPUTER SIMULATION; CYCLOTRON RESONANCE; ELECTRON GAS; FERMI LEVEL; GALLIUM NITRIDE; HETEROJUNCTIONS; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; QUANTUM THEORY; SURFACE ROUGHNESS;

ELECTRON SCATTERING;

EID: 1642588407 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1655704 Document Type: Article

Times cited : (45)

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