Electrically active defects in Ni-contaminated Cz-Si with oxygen precipitates

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2780, Issue , 1996, Pages 137-140

  Kaminski, Pawet ^a   Kozlowski, Roman ^a   Misiuk, Andrzej ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; DEFECTS; ELECTRON SPECTROSCOPY; ELECTRONIC PROPERTIES; HEAT TREATMENT; IMPURITIES;

CZOCHRALSKI SILICON; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRICALLY ACTIVE DEFECTS; ELECTRON TRAPS; OXYGEN PRECIPITATION; POINT DEFECTS;

SEMICONDUCTING SILICON;

EID: 0029706488     PISSN: 0277786X     EISSN: None     Source Type: None    
DOI: 10.1117/12.238141     Document Type: Conference Paper

References (6)