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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 6, 2004, Pages 3137-3142

Nanomechanical switch fabrication by focused-ion-beam chemical vapor deposition

(13) Morita, Takahiko a,b Nakamatsu, Ken Ichiro a,b Kanda, Kazuhiro a,b Haruyama, Yuichi a,b Kondo, Kazushige b Hoshino, Takayuki b,c Kaito, Takashi d Fujita, Jun Ichi b,e Ichihashi, Toshinari b,f Ishida, Masahiko b,f Ochiai, Yukinori b,f Tajima, Tsutomu g Matsui, Shinji a,b

a UNIVERSITY OF HYOGO (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c UNIVERSITY OF TOKYO (Japan)

d SII NANOTECHNOLOGY INC (Japan)

e UNIVERSITY OF TSUKUBA (Japan)

f NEC CORPORATION (Japan)

g Crestec Corp (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CHEMICAL VAPOR DEPOSITION; DIAMOND LIKE CARBON FILMS; ELASTIC MODULI; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; ELECTRIC SWITCHES; ELECTRON SCATTERING; ENERGY DISPERSIVE SPECTROSCOPY; INDUCTANCE; ION BEAMS; RAMAN SCATTERING; THRESHOLD VOLTAGE; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN COMPOUNDS; VOLTAGE CONTROL;

ELECTRICAL CHARGES; METAL GASES; NANOMECHANICAL SWITCHES; NANOWIRING;

NANOSTRUCTURED MATERIALS;

EID: 19944433077 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1826063 Document Type: Conference Paper

Times cited : (39)

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