Graphitization of Fe-doped amorphous carbon pillars grown by focused-ion-beam-induced chemical-vapor deposition

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 6, 2002, Pages 2686-2689

  Fujita, J ^a   Ishida, M ^a   Ichihashi, T ^a   Ochiai, Y ^a   Kaito, T ^b   Matsui, S ^c  

^a NEC CORPORATION   (Japan)

^b SEIKO INSTRUMENTS INC   (Japan)

^c UNIVERSITY OF HYOGO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CATALYSIS; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; EPITAXIAL GROWTH; GRAPHITIZATION; ION BEAMS; IRON; PHASE COMPOSITION; SEMICONDUCTOR DOPING; SOLIDS; THREE DIMENSIONAL;

FOCUSED ION BEAM; FOCUSED ION BEAM INDUCED CHEMICAL VAPOR DEPOSITION; HOMO EPITAXIAL GROWTH; IRON DOPED AMORPHOUS CARBON; SOLID PHASE CRYSTALLIZATION; SOLID PHASE GRAPHITIZATION;

CARBON;

EID: 0036883153     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1518022     Document Type: Article

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