Electrical properties of Si-SiO2 interface traps and evolution with oxide thickness in MOSFET's with oxides from 2.3 to 1.2 nm thick

Solid-State Electronics

Volumn 47, Issue 10, 2003, Pages 1677-1683

  Bauza, D ^a  

^a Grenoble INP Phelma   (France)

Author keywords

Carrier emission; Charge pumping; MOSFET's; Tunneling current; Ultrathin oxides

Indexed keywords

ELECTRIC PROPERTIES; MOSFET DEVICES; QUANTUM THEORY; SILICA; SILICON;

INTERFACE TRAPS;

INTERFACES (MATERIALS);

EID: 0043095349     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00169-2     Document Type: Conference Paper

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