Ultrahigh gain and non-radiative recombination channels in 1.5 μm range metamorphic InAs-InGaAs quantum dot lasers on GaAs substrates

Semiconductor Science and Technology

Volumn 20, Issue 1, 2005, Pages 33-37

  Novikov, I I ^a   Gordeev, N Yu ^a   Maximov, M V ^a   Shernyakov, Yu M ^a   Zhukov, A E ^a   Vasil'ev, A P ^a   Semenova, E S ^a   Ustinov, V M ^a   Ledentsov, N N ^b   Bimberg, D ^b   Zakharov, N D ^c   Werner, P ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SPONTANEOUS EMISSION;

MODAL GAIN; NON-RADIATIVE RECOMBINATION; RECOMBINATION CHANNELS; ULTRAHIGH GAIN;

SEMICONDUCTOR QUANTUM DOTS;

EID: 19944426272     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/1/005     Document Type: Article

References (19)

1. Ledentsov N N 2002 Long-wavelength quantum-dot lasers on GaAs substrates: from media to device concepts IEEE J. Sel. Top. Quantum Electron. 8 1015
2. Park G, Shchekin O B, Huffaker D L and Deppe D G 2000 Low-threshold oxide-confined 1.3-μm quantum-dot laser IEEE Photon. Technol. Lett. 12 230
3. Shchekin O B, Ahn J and Deppe D G 2002 High temperature performance of self-organised quantum dot laser with stacked p-doped active region Electron. Lett. 38 712
4. Kovsh A R et al 2002 InAs/InGaAs/GaAs quantum dot lasers of 1.3μm range with high (88%) differential efficiency Electron. Lett. 38 1104
5. Zhukov A E, Volovik B V, Mikhrin S S, Maleev N A, Tsatsul'nikov A F, Nikitina E V, Kayander I N, Ustinov V M and Ledentsov N N 2001 1.55-1.6μm electroluminescence of GaAs based diode structures with quantum dots Tech. Phys. Lett. 27 734
6. Balakrishnan G, Huang S, Rotter T J, Stintz A, Dawson L R, Malloy K J, Xu H and Huffaker D L 2004 2.0μm wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer Appl. Phys. Lett. 84 2058
7. Xin Y C, Vaughn L G, Dawson L R, Stintz A, Lin Y, Lester L F and Huffaker D L 2003 InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers J. Appl. Phys. 94 2133
8. Zhukov A E et al 2003 Metamorphic lasers for 1.3-μm spectral range grown on GaAs substrates by MBE Semiconductors 37 1119
9. Maximov M V et al 2000 Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors Phys. Rev. B 62 16671
10. Gollub D, Moses S, Fischer M and Forchel A 2003 1.42μm continuous-wave operation of GaInNAs laser diodes Electron. Lett. 39 777
11. Li L H, Sallet V, Patriarche G, Largeau L, Bouchoule S, Travers L and Harmand J C 2003 Investigations on GaInNAsSb quinary alloy for 1.5μm laser emission on GaAs Appl. Phys. Lett. 83 1298
12. Asryan L V, Grundmann M, Ledentsov N N, Stier O, Suris R A and Bimberg D 2001 Effect of excited-state transitions on the threshold characteristics of a quantum dot laser IEEE J. Quantum Electron. 37 418
13. Mathur A and Dapkus P D 1996 Fabrication, characterization and analysis of low threshold current density 1.55μm-strained quantum-well lasers IEEE J. Quantum Electron. 32 222
14. Coldren L A and Corzine S W 1995 Diode Lasers and Photonic Integrated Circuits (New York: Wiley-Interscience)
15. Ledentsov N N et al 2003 High performance quantum dot lasers on GaAs substrates operating in 1.5μm range Electron. Lett. 39 1126
16. Poguntke K R and Adams A R 1992 Analysis of radiative efficiency of long wavelength semiconductor lasers Electron. Lett. 28 41
17. Mukai K, Nakata Y, Otsubo K, Sugawara M, Yokoyama N and Ishikawa H 2000 1.3-μm CW lasing characteristics of self-assembled InGaAs-GaAs quantum dots IEEE J. Quantum Electron. 36 472
18. Dyakonov M I and Kachorovskii V Yu 1994 Nonthreshold Auger recombination in quantum wells Phys. Rev. B 49 17130
19. Maximov M V et al 2004 High-power InAs-InGaAs quantum dot lasers for 1.5μm spectral region grown on GaAs substrates Semiconductors 38 763