Fabrication, characterization and analysis of low threshold current density 1.55-μm-strained quantum-well lasers

IEEE Journal of Quantum Electronics

Volumn 32, Issue 2, 1996, Pages 222-226

  Mathur, Atul ^b,c   Dapkus, P Daniel ^{a,b,d,e,f,g,h,i}  

^a IEEE

^b University of Southern California ^*

^c SDL INC   (United States)

^d UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^e LUCENT TECHNOLOGIES   (United States)

^f Rockwell International   (United States)

^g UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

^h Natl Ctr Intgd Photonic Technol

ⁱ Natl Ctr Intgd Photonic Technol ^*

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CURRENT DENSITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

TERTIARYBUTYLARSINE; TERTIARYBUTYLPHOSPHINE; THRESHOLD CURRENT DENSITY; TRANSPARENCY CURRENT DENSITY;

SEMICONDUCTOR LASERS;

EID: 0030086394     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.481869     Document Type: Article

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