Charge trapping in irradiated SOI wafers measured by second harmonic generation

IEEE Transactions on Nuclear Science

Volumn 51, Issue 6 II, 2004, Pages 3231-3237

  Jun, Bongim ^a   Schrimpf, Ronald D ^a   Fleetwood, Daniel M ^a   White, Yelena V ^a   Pasternak, Robert ^a   Rashkeev, Sergey N ^a   Brunier, Francois ^b   Bresson, Nicolas ^c   Fouillat, Marion ^d   Cristoloveanu, Sorin ^c   Tolk, Norman H ^a  

^a VANDERBILT UNIVERSITY   (United States)

^b PARC TECHNOLOGIQUE DES FONTAINES   (France)

^c Grenoble INP Phelma   (France)

^d Bordeaux 1 Mesures Physiques ^*  (France)

Author keywords

Pseudo MOSFET; Radiation effects; Second harmonic generation (SHG); Silicon on insulator (SOI); Total dose; UNIBOND

Indexed keywords

ELECTRIC CHARGE MEASUREMENT; ELECTRON TRAPS; INTERFACES (MATERIALS); MOSFET DEVICES; RADIATION EFFECTS; SECOND HARMONIC GENERATION; SIGNAL PROCESSING; SILICON ON INSULATOR TECHNOLOGY;

PSEUDO-MOSFET; TOTAL DOSE; UNIBOND;

SILICON WAFERS;

EID: 19944389539     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.839140     Document Type: Conference Paper

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