Characterization of X-ray radiation damage in Si/SiO2 structures using second-harmonic generation

IEEE Transactions on Nuclear Science

Volumn 47, Issue 6 III, 2000, Pages 2256-2261

  Marka, Z ^a   Singh, S K ^a   Wang, W ^a   Lee, S C ^c   Kavich, J ^a   Glebov, B ^a   Rashkeev, S N ^a   Karmarkar, A P ^c   Albridge, R G ^a   Pantelides, S T ^a,b   Schrimpf, R D ^c   Fleetwood, D M ^c   Tolk, N H ^a  

^a VANDERBILT UNIVERSITY   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC FIELD EFFECTS; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRAPS; INTERFACES (MATERIALS); IRRADIATION; LASER PULSES; SECOND HARMONIC GENERATION; SEMICONDUCTING SILICON; SILICA;

ELECTRON HOLE INJECTION; FEMTOSECOND LASER PULSES; MULTIPHOTON CARRIER INJECTION; X RAY IRRADIATION; X RAY RADIATION DAMAGE;

RADIATION DAMAGE;

EID: 0034450518     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.903762     Document Type: Conference Paper

References (25)

1. Correlating the radiation response of MOS capacitors and transistors
2. Hole traps and trivalent Si defects in irradiated MOS devices
3. Paramagnetic defect centers in irradiated BESOI and SIMOX buried oxides
4. A review of optical second-harmonic and sum-frequency generation at surfaces and interfaces
5. Characterization of semiconductor interfaces by second-harmonic generation
6. 2 interface
7. 2 interface induced by charge transfer
8. 2 films via ambient oxygen
9. Hole transport in MOS oxides
10. The response of MOS devices to dose-enhanced low-energy radiation
11. Analysis of second-harmonic generation by unamplified, high-repetition-rate, ultrashort laser pulses at Si(001) interfaces
12. 2 interface
13. Second- and third-harmonic generation from cubic centrosymmetric crystals with vicinal faces: Phenomenological theory and experiment
14. Hole removal in thin-gate MOSFET's by tunneling
15. Inversion layer transport and the radiation hardness of the Si-SiO2 interface
16. The nature of the trapped hole annealing process
17. Bulk oxide traps and border traps in MOS capacitors
18. 2
19. 2: Evidence for a localized EP center structure
20. Microscopic nature of border traps in MOS oxides
21. 2: A 1st principles quantum mechanical investigation
22. Hydrogen electrochemistry and stress-induced leakage current in silica
23. Radiation-induced charge neutralization and interface-trap buildup in metal-oxide-semiconductor devices
24. 2 interface induced by charge transfer