Charge Separation Techniques for Irradiated Pseudo-MOS SOI Transistors

IEEE Transactions on Nuclear Science

Volumn 50, Issue 6 I, 2003, Pages 1891-1895

  Jun, B ^a   Fleetwood, D M ^a   Schrimpf, R D ^a   Zhou, X ^a   Montes, E J ^a   Cristoloveanu, S ^b  

^a VANDERBILT UNIVERSITY   (United States)

^b IMEP LAHC   (France)

Author keywords

Charge separation; Dual transistor method; Midgap method; Pseudo MOSFET; SOI transistor

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRIC CHARGE; ELECTRIC INSULATORS; ELECTRIC POTENTIAL; ENERGY GAP; INTERFACES (MATERIALS); IONIZING RADIATION; MOSFET DEVICES; SILICON;

CHARGE SEPARATION TECHNIQUE; DUAL TRANSISTOR METHOD; MIDGAP METHOD; PSEUDO-MOSFET; SILICON ON INSULATOR (SOI) TRANSISTORS;

MOS CAPACITORS;

EID: 1242332796     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.821380     Document Type: Conference Paper

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