High performance 0.15 μm self-aligned SiGe p-MOS-MODFET's with SiN gate dielectric

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 577-580

  Lu, W ^a   Hammond, R ^a   Koester, S J ^a   Wang, X W ^a   Chu, J O ^a   Ma, T P ^a   Adesida, I ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; NATURAL FREQUENCIES; REACTIVE ION ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON NITRIDE; SUBSTRATES; TRANSCONDUCTANCE;

JET VAPOR DEPOSITION; MODULATED DOPED FIELD EFFECT TRANSISTORS; SILICON NITRIDE GATE DIELECTRIC; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION;

MOSFET DEVICES;

EID: 0033324591     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)