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Materials Research Society Symposium - Proceedings

Volumn 567, Issue , 1999, Pages 73-81

JVD silicon nitride and titanium oxide as advanced gate dielectrics

(1) Ma, T P a

a Yale University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC FILMS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GATES (TRANSISTOR); MOS DEVICES; TITANIUM OXIDES; VAPOR DEPOSITION; VOLTAGE MEASUREMENT;

JET VAPOR DEPOSITION; POST DEPOSITION ANNEALING PROCESS; POST METAL ANNEAL;

SILICON NITRIDE;

EID: 0033322763 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: 10.1557/proc-567-73 Document Type: Conference Paper

Times cited : (3)

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