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Volumn 280, Issue 1-2, 2005, Pages 151-160

Growth of bulk SiGe single crystals by liquid phase diffusion

Author keywords

A1. Diffusion; A2. Single crystal; A3. Liquid phase; B2. Silicon, Germanium

Indexed keywords

CHARACTERIZATION; CRYSTAL GROWTH; DIFFUSION; ETCHING; GERMANIUM; HETEROJUNCTION BIPOLAR TRANSISTORS; SINGLE CRYSTALS; X RAY ANALYSIS;

EID: 19944363179     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.03.030     Document Type: Article
Times cited : (71)

References (30)
  • 5
    • 19944419535 scopus 로고    scopus 로고
    • SiGe-based photodetectors for optical communications, properties of silicon germanium and SiGe: Carbon
    • E. Kasper, K. Lyutovich (Eds.) London
    • M. Jutzi, M. Berroth, SiGe-based photodetectors for optical communications, properties of silicon germanium and SiGe: carbon, in: E. Kasper, K. Lyutovich (Eds.), INSPEC 2000, London, pp. 342.
    • INSPEC 2000 , pp. 342
    • Jutzi, M.1    Berroth, M.2
  • 18
    • 0003659637 scopus 로고    scopus 로고
    • Department of Electrical Engineering and Computer Science, The University of Michigan, December 26
    • P. Bhattacharya, J. Singh, I.E. Gular, Final Technical Report, Department of Electrical Engineering and Computer Science, The University of Michigan, December 26, 1997.
    • (1997) Final Technical Report
    • Bhattacharya, P.1    Singh, J.2    Gular, I.E.3
  • 30
    • 24744440505 scopus 로고    scopus 로고
    • A continuum model for the liquid phase diffusion growth of bulk SiGe single crystals
    • in press
    • M. Yildiz, S. Dost, A continuum model for the liquid phase diffusion growth of bulk SiGe single crystals, Int. J. Engng. Sci., in press.
    • Int. J. Engng. Sci.
    • Yildiz, M.1    Dost, S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.