Czochralski growth of bulk crystals of Ge1-xSix alloys II. Si-rich alloys

Journal of Crystal Growth

Volumn 191, Issue 3, 1998, Pages 393-398

  Yonenaga, I ^a   Nonaka, M ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Czochralski growth; GeSi; Grown in defects; Oxygen impurity; Solute segregation

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; DISLOCATIONS (CRYSTALS); INFRARED SPECTROSCOPY; OXYGEN; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; X RAY SPECTROSCOPY;

ENERGY DISPERSIVE X RAY (EDX) SPECTROSCOPY;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 0032118823     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00133-X     Document Type: Article

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