A continuum model for the Liquid Phase Diffusion growth of bulk SiGe single crystals

International Journal of Engineering Science

Volumn 43, Issue 13-14, 2005, Pages 1059-1080

  Yildiz, Mehmet ^a   Dost, Sadik ^a  

^a UNIVERSITY OF VICTORIA   (Canada)

Author keywords

Convection; Crystal growth; Diffusion; Germanium; Liquid phase; Modeling; Silicon

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DIFFUSION; GERMANIUM; MATHEMATICAL MODELS; PHASE DIAGRAMS; SILICON COMPOUNDS;

CONVECTION; LIQUID PHASE; LIQUID PHASE DIFFUSION (LPD); MODELING;

SINGLE CRYSTALS;

EID: 24744440505     PISSN: 00207225     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijengsci.2005.06.001     Document Type: Article

References (28)

1. J.D. Cressler Re-engineering silicon: Si-Ge heterojunction bipolar technology IEEE Spectrum March 1995 49 55
2. 1-x structures grown by molecular beam epitaxy Appl. Phys. Lett. 59 1991 1611 1613
3. M. Jutzi, M. Berroth, in: E. Kasper, K. Lyutovich, (Eds.), SiGe-based photodetectors for optical communications: properties of silicon germanium and SiGe:Carbon, INSPEC 2000, London, p. 342.
4. K. Said, J. Poortmans, and M. Caymax High quality relaxed SiGe epitaxial layers for solar cell application Thin Solid Films 337 1999 85 89
5. C.M. Bhandari, and D.M. Rowe Silicon-germanium alloys as high-temperature thermoelectric materials Contemp. Phys. 21 1980 219 242
6. M.L. Kozhukh, I.N. Belokurova, S.B. Vahrushev, A.N. Titkov, and I.L. Shul'pina Study of Ge-Si solid solution crystals by X-ray topography and neutron diffraction Nucl. Instrum. Meth. 213 1983 483 487
7. J. Schilz, and V.N. Romanenko Review: bulk growth of silicon-germanium solid solutions J. Mater. Sci.: Mater. Electron. 6 1995 265 279
8. M. Yildiz, A combined experimental and modeling study for the growth of SiGe single crystals by liquid phase diffusion (LPD), Ph.D. Thesis, 2005. Department of Mechanical Engineering, University of Victoria, Victoria, BC, Canada.
9. H. Sheibani, S. Dost, S. Sakai, and B. Lent Growth of bulk single crystals under applied magnetic field by liquid phase electroepitaxy J. Cryst. Growth 258 3-4 2003 283 295
10. H. Sheibani, Y.C. Liu, S. Sakai, B. Lent, and S. Dost The effect of applied magnetic field on the growth mechanisms of liquid phase electroepitaxy Int. J. Eng. Sci. 41 2003 401 415
11. M. Yildiz, S. Dost, and B. Lent Growth of bulk SiGe single crystals by liquid phase diffusion J. Cryst. Growth 280 1-2 2005 151 160
12. 1-x single crystal with uniform composition (x = 0.02) on a compositionally graded crystal for use as solar cells J. Cryst. Growth 205 1999 270 276
13. S. Dost, and H.A. Erbay A continuum model for electroepitaxy Int. J. Eng. Sci. 33 10 1995 1385 1402
14. S. Dost, and Z. Qin A model for liquid phase electroepitaxial growth of ternary alloy semiconductors. Part I-Theory Int. J. Appl. Electromagnet. Mech. 7 2 1996 109 128
15. CFX-4.3 Solver manual. AEA Technology plc, Didcot. UK, 2000.
16. R.M. Bowen Theory of mixtures in "Continuum Physics" A.C. Eringen Mixtures and Electromagnetic Field Theories vol. III 1976 Academic Press New York
17. T. Nishinaga Microchannel epitaxy: an overview J. Cryst. Growth 237-239 2002 1410 1417
18. Y.C. Liu, Z.R. Zytkiewicz, and S. Dost A model for epitaxial lateral overgrowth of GaAs by liquid phase electroepitaxy J. Cryst. Growth 265 2004 341 350
19. P.M. Adornato, and R.A. Brown Convection and segregation in directional solidification of dilute and non-dilute alloys: effects of ampoule and furnace design J. Cryst. Growth 80 1987 155 190
20. C. Steliana, and T. Duffarb Modeling of thermosolutal convection during Bridgman solidification of semiconductor alloys in relation with experiments J. Cryst. Growth 266 2004 190 199
21. M. Yildiz, S. Dost, B. Lent, Evolution of the growth interface in liquid phase diffusion growth of bulk SiGe single crystals, Cryst. Growth Technol., submitted for publication.
22. K. Nikfetrat, N. Djilali, and S. Dost Accuracy and non-uniqueness aspects of numerical solutions of natural convection problems Appl. Math. Modell. 20 1996 371 378
23. Metals Handbook 10th ed. Properties and Selection: Nonferrous Alloys and Special Purpose Materials vol. 2 1990 ASM International, The Materials Information Society
24. E. Yamasue, M. Susa, H. Fukuyama, and K. Nagata Thermal conductivities of silicon and germanium in solid and liquid states measured by non-stationary hot wire method with silica coated probe J. Cryst. Growth 234 2002 121 131
25. V. Palankovski, R. Schultheis, and S. Selberherr Simulation of power heterojunction bipolar transistors on gallium arsenide IEEE Trans. Electron. Dev. 48 6 2001
26. H. Nakanishi, K. Nakazato, S. Asaba, K. Abe, S. Maeda, and Terashima Temperature dependence of density of molten germanium measured by a newly developed Archimedean technique J. Cryst. Growth 191 1998 711 717
27. x J. Cryst. Growth 207 1999 278 291
28. Supplier provided properties. Available from: .