Photoluminescence properties from β-FeSi2 film epitaxially grown on Si, YSZ and Si//YSZ

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 8-11, 2005, Pages

  Akiyama, Kensuke ^a   Kaneko, Satoru ^a   Terai, Yoshikazu ^b   Maeda, Yoshihito ^c   Funakubo, Hiroshi ^d  

^a KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

^b Osaka Prefecture University   (Japan)

^c KYOTO UNIVERSITY   (Japan)

^d TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

FeSi2; MOCVD; Photoluminescence; Thin film

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; IRON COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SILICON; X RAY DIFFRACTION ANALYSIS;

Β-FESI2; IRON SOURCES; LATTICE MATCHING; LATTICE STRAIN; PHOTON CARRIERS;

THIN FILMS;

EID: 19844369265     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.L303     Document Type: Article

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