Composition dependence of constituent phase of Fe-Si thin film prepared by MOCVD

Journal of Crystal Growth

Volumn 237-239, Issue 1-4, 2002, Pages 1951-1955

  Akiyama, Kensuke ^a   Ohya, Seishiro ^a   Konuma, Seiji ^b   Numata, Ken ^b   Funakubo, Hiroshi ^c  

^a KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

^b 3 2 1 Sakado Takatsu K   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A1. Crystal structure; A3. Metalorganic chemical vapor deposition; B1. Semoconducting silicon compounds

Indexed keywords

COMPOSITION; CRYSTAL STRUCTURE; DIFFUSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHASE DIAGRAMS; SEMICONDUCTING SILICON COMPOUNDS; STOICHIOMETRY; SUBSTRATES;

DEPOSITION TEMPERATURE;

THIN FILMS;

EID: 0036530605     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02257-6     Document Type: Article

References (4)