Current detection during tip-induced anodic oxidation of titanium by atomic force microscope

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5635, Issue , 2005, Pages 305-312

  Kuang, Dengfeng ^a   Liu, Qinggang ^a   Guo, Weilian ^a   Zhang, Shilin ^a   Hu, Xiaotang ^a  

^a TIANJIN UNIVERSITY   (China)

Author keywords

AFM tip induced anodic oxidation; Biased voltage; Ionic current detection; Ti film; Ti oxide lines

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEPOSITION; GROWTH KINETICS; HIGH ELECTRON MOBILITY TRANSISTORS; PHOTOCONDUCTIVITY; SPUTTERING; THIN FILMS; TITANIUM;

AFM TIP INDUCED ANODIC OXIDATION; BIASED VOLTAGE; IONIC CURRENT DETECTION; TI FILM; TI OXIDE LINES;

ANODIC OXIDATION;

EID: 19844363574     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.572123     Document Type: Conference Paper

References (24)

1. H. C. Day, D. R. Allee, "Selective area oxidation of silicon with a scanning force microscope", Appl. Phys. Lett. 62 2691-2693, (1993).
2. E. S. Snow, P. M. Campbell, and P. J. McMarr, "Fabrication of silicon nanostructures with a scanning tunneling microscope", Appl. Phys. Lett. 63 749-751, (1993).
3. P. M. Campbell, E. S. Snow, and P. J. McMarr, "Fabrication of nanometer-scale side-gated silicon field effect transistors with an atomic force microscope", Appl. Phys. Lett., 66 1388-1390, (1995).
4. D. Stievenard, P. A. Fontaine, and E. Dubois, "Nanooxidation using a scanning probe microscope: An analytical model based on field induced oxidation", Appl. Phys. Lett. 70 3272-3274, (1997).
5. Ph. Avouris, T. Hertel and R. Martel, "Atomic force microscope tip-induced local oxidation of silicon: kinetics, mechanism, and nanofabrication", Appl. Phys. Lett. 71 285-287, (1997).
6. E. S. Snow, G. G. Jernigah and P. M. Campbell, "The kinetics and mechanism of scanned probe oxidation of Si", Appl. Phys. Lett. 76 1782-1784, (2000).
7. R. J. M. Vullers, M. Ahlskog, and C. Van Haesendonck, "Titanium nanostructures made by local oxidation with the atomic force microscope" Appl. Surf. Sci, 144-145 584-588, (1999).
8. S. Lemeshko, S. Gavrilov, V. Shevoyakov, and et al., "Investigation of tip-induced ultrathin Ti film oxidation kinetics", Nanotechnology 12 273-276, (2001).
9. E. S. Snow, P. M. Campbell, M. Twigg, and et al., "Ultrathin PtSi layers patterned by scanned probe lithography", Appl. Phys. Lett. 79 1109-1111, (2001).
10. 4 films", Appl. Phys. Lett. 79 1549-1551, (2001).
11. 3 surface", Appl. Phys. Lett. 84 2670-2672, (2004).
12. R. Held, T. Heinzel, P. Studerus, and et al., "Semiconductor quantum point contact fabricated by lithography with an atomic force microscope", Appl. Phys. Lett. 71 2689-2691, (1997).
13. K. Matsumoto, Y. Gotoh, T. Maeda, and et al., "Room-temperature single-electron memory made by pulse-mode atomic force microscopy nano oxidation process on atomically flat α-alumina substrate", Appl. Phys. Lett. 76 239-241, (2000).
14. E. S. Snow and P. M. Campbell, "Fabrication of Si nanostructures with an atomic force microscope", Appl. Phys. Lett. 64 1932-1934, (1994).
15. F. Perez-Murano, C. Martin, N. Barniol and et al., "Measuring electrical current during scanning probe oxidation", Appl. Phys. Lett. 82 3086-3088, (2003).
16. H. Kuramochi, K. Ando, and H. Yokoyama, "Minute current detection during anodic oxidation by atomic force microscope at high humidity", Jpn. J.Appl. Phys. 42 5892-5895, (2003).
17. H. Kuramochi, F. Perez-Murano, J. A. Dagata, and et al., "Faradaic current detection during anodic oxidation of the H-passivated p-Si(001) surface with controlled relative humidity", Nanotechnology 15 297-302, (2004).
18. H. Kuramochi, K. Ando, T. Tokizaki and et al., "In situ detection of faradaic current in probe oxidation using a dynamic force microscope", Appl. Phys. Lett. 84 4005-4007, (2004).
19. H. Kuramochi, K. Ando, Y. Shikakura and et al., "Nano-oxidation and in situ faradaic current detection using dynamic carbon nanotube probes", Nanotechnology 15 1126-1130, (2004).
20. K Matsumoto, "STM/AFM nano- oxidation process to room temperature operated single electron transistor and other devices", Proceedings of the IEEE 85 612-628, (1997).
21. K Matsumoto, M Ishii, K Segawa, and et al., "Room temperature operation of a single electron transistor made by the scanning tunneling microscope nano oxidation process for the TiOx/Ti system", Appl. Phys. Lett. 82 34-36, (1996).
22. V Bubanja, K Matsumoto, Y Gotoh, "Single electron memory at room temperature: experiment and simulation", Jpn. J Appl. Phys. Lett. 40 87-91, (2001).
23. E. Y. Jiang, H. Liu, M. Sh. Liu and et al., "Preparation of functionally gradient iron nitrides thin films", Chinese Journal of Materials Research 9 50-54, (1995).
24. G. Binnig and H. Rohrer, "Scanning tunneling microscopy", Surf. Sci. 126 236-244, (1983).