Single electron memory at room temperature: Experiment and simulation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 1, 2001, Pages 87-91

  Bubanja, Vladimir ^a,b   Matsumoto, Kazuhiko ^a   Gotoh, Yoshitaka ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b CALLAGHAN INNOVATION   (New Zealand)

Author keywords

Atomic force microscopy; Coulomb blockade; Memory; Single electron; Tunnel junction

Indexed keywords

COMPUTER SIMULATION; DATA STORAGE EQUIPMENT; ELECTRIC NETWORK ANALYSIS; ELECTRON TRAPS; ELECTRON TUNNELING; LOGIC CIRCUITS; MONTE CARLO METHODS; TUNNEL JUNCTIONS;

SINGLE ELECTRON MEMORY;

ELECTRON DEVICES;

EID: 0035060635     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.40.87     Document Type: Article

References (19)