In-plane optical anisotropy in Inx Ga1-x NGaN multiple quantum wells induced by Pockels effect

Applied Physics Letters

Volumn 86, Issue 1, 2005, Pages

  Chang, H J ^a   Chen, C H ^a   Huang, L Y ^a   Chen, Y F ^a   Lin, T Y ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b Institute of Optoelectronic Sciences   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL ORIENTATION; CURRENT DENSITY; ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PARAMETER ESTIMATION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

ANGULAR RESOLUTION; OPTICAL ANISOTROPY; WIDE-BAND-GAP SEMICONDUCTORS; ZINC-BLADE MATERIALS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 19744383364     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1841477     Document Type: Article

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